The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)

Chen Yuanlong,G Yang,M Ziegler

doi:10.1051/e3sconf/202019801025

Abstract

Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.

Highlights

With the increasing demands of modern industrial appliances and products increase, transistors, especially MOSFET (Metal-Oxide-Semiconductor Field-EffectTransistor) are frequently used in the switching devices for its high conductivity, sensitivity and power efficiency
A review of current used n-channel MOSFET ‘IRF510’ and a brief introduction of a typical Gallium Nitride based n-channel MOSFET ‘GS-065-008-1-L’ will be made to compare, which are within the aspects of conducting capability, sensitivity and power efficiency to show the deficiencies of old version transistor (IRF510)
The reason is cost-effective function of GS-065-0081-L has been proved in the earlier paragraphs, it is only in terms of industrial-strength MOSFET, while IRF510 is less frequently used in modern industrial productions because of its low efficiency but low cost

Summary

Introduction

With the increasing demands of modern industrial appliances and products increase, transistors, especially MOSFET (Metal-Oxide-Semiconductor Field-EffectTransistor) are frequently used in the switching devices for its high conductivity, sensitivity and power efficiency. In order to broaden its application, GaN-based MOSFET should be introduced to more engineers, especially to the “future engineers” in university. A review of current used n-channel MOSFET ‘IRF510’ and a brief introduction of a typical Gallium Nitride based n-channel MOSFET ‘GS-065-008-1-L’ will be made to compare, which are within the aspects of conducting capability, sensitivity and power efficiency to show the deficiencies of old version transistor (IRF510). In this case, the suggested replacement of the MOSFET used in EE courses will be taken as the optimization of EE undergraduate courses. A further discussion about the difficulties to achieve the replacement is included

Current status of gallium nitride MOSFETS

Discussion

Conclusion