Abstract

Computer simulation is used to investigate sample transport phenomena of cross microfluidic chips. In this study, Kirchhoff circuit theory is employed to calculate the electric field strength and approximate electroosmotic flow. It is apparent from the results that both the simulation and the theoretical data show similar trends in the electroosmosis of cross microchips. The main target in this study is to summarize the optimal controlling parameter values for avoiding sample leakage in the transport process. The effects of the applied voltage ratio, the geometry ratio and the zeta potential were simulated using a computational fluid dynamics and multiphysics solver software package (CFD-ACE+). Under our designed conditions, two major conclusions were reached: (1) for high-voltage ratios, the sample leakage can be avoided as the geometry ratio is large enough at 0.5 or greater, and (2) for small geometries, maintaining a smaller voltage ratio, 0.3 or less, is essential for avoiding sample leakage. The key is to govern the sample velocity in the upstream faster than that in the downstream. Although real experimental conditions can be further fine tuned under microscopy monitoring, these conclusions are helpful to design the proper channel geometry and set up suitable voltage parameters to avoid sample leakages in one cross-channel chip.

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