Abstract
A selective emitter from a single diffusion process has been applied to screen printed multicrystalline silicon solar cells. The influence of different dopant concentrations in the highly doped regions intended for metallisation and alignment tolerances has been investigated. It was found that the gain reached by increasing the dopant concentration and thereby lowering the specific contact resistance of the emitter electrode can be outweighed by the loss in the short circuit current density (JSC) caused by an increased recombination at the front surface and in the emitter. Therefore the process parameters have to be chosen carefully. The open circuit voltage (VOC) was found to be nearly independent of the initial doping level.
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