Abstract
Photoacoustic Spectroscopy (PAS) has been performed on Porous Silicon Layers (PSL) obtained by chemical and electrochemical etching of crystalline Silicon. In the investigated energy range (2.0eV-4.7eV) the samples behave as optically opaque and show strong light scattering properties so to prevent the application of standard reflectivityftrasmission techniques. PAS proves suitable in studying porous media, providing evidence that PSLs retain the original cristallinity. The presence of native oxides on PSLs has been revealed by PAS.
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