Abstract
This paper discusses features of radiation absorption in the spectral region from 3 to 5 µm by single-crystal silicon: the dependence of the absorption coefficient on resistivity in samples of n- and p-type conductivity, the additional absorption associated with intraband electron transitions in the conduction band, and the influence of short-wavelength illumination on the transmission spectra. Recommendations for the use of silicon as an optical medium are given from an analysis of the calculated and experimental data.
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