The optical properties of CdS crystal grown by the sublimation method

Abstract

A cadmium sulfide (CdS) single crystal was grown by the sublimation method without a seed crystal in a two-stage vertical electric furnace. The carrier concentration and mobility obtained from Hall measurements at room temperature were 2.90 ×10 16 cm −3 and 316 cm 2/V s, respectively. The photoluminescence and the photocurrent measurement of the CdS single crystal have been performed in the temperature ranging from 20 to 293 K. From the photoluminescence measurement, the energy of the free exciton Ex(A) and Ex(B) has been obtained to be 2.5511 and 2.5707 eV, respectively. The variance of the peak position, intensity, and linewidth of the free excitons as a function of the temperature have been investigated by means of the conventional empirical relations and Toyozawa's theory. The crystal field of the CdS and its splitting energy, Δ c r, have been found to be 19.6 meV. In the photocurrent measurement, only the Ex(A) exciton peak has been observed. The energy band gap of the CdS at room temperature was determined to be 2.4749 eV by the photoluminescence and photocurrent measurement. Also, the temperature dependence of the energy band gap of the CdS, E g( T), has been examined.