Abstract

A procedure to make optical quality thin films of ZnxCd(1-x) Te by use of thermal evaporation of the ternary compound has been investigated. Structural and optical properties of ZnxCd(1-x)Te solid solution with x = 0.1 to 0.5 were synthesized, from the resulting ZnTe and CdTe composition used in preparation of thin films. Structural investigation indicates they have polycrystalline structure. Composition was confirmed from EDAX while SEM picture shows homogeneity in films. Plots of (αhν)2 versus (hν) yield straight line indicating direct transition occurs with optical band gap energies in the range 1.7 - 2.3 eV. It is also found with increase Zn content the band gap of the films increases. Refractive indices and extinction coefficients have been evaluated in the spectral range (200 - 2500 nm).

Highlights

  • Solid solution formation in semiconductors has been of interest for a number of years

  • An important question regarding ternary zinc-blende compound semiconductors is concerned with the structural and dynamic changes that can occur upon replacement of either cations or anions in the binary base material The II-VI compounds semiconductors and solid solutions based on them are promising source for various types of thin film devices such as thin film transistors [1], Solar cells [2] and photoconductors [3]

  • Thin films of ZnxCd(1-x)Te were prepared by variety of techniques, such as, two source vacuum evaporation [6], molecular beam epitaxy [7], chemical vapour deposition and closed space vapour transport [8,9], physical vapour transport (PVT) [10], vertical Bridgman growth [11]

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Summary

Introduction

Solid solution formation in semiconductors has been of interest for a number of years. Thin films of ZnxCd(1-x)Te were prepared by variety of techniques, such as, two source vacuum evaporation [6], molecular beam epitaxy [7], chemical vapour deposition and closed space vapour transport [8,9], physical vapour transport (PVT) [10], vertical Bridgman growth [11]. In the recent study ZnxCd(1-x)Te thin films are deposited by thermal evaporation at substrate temperature (373 K) and the films are annealed and characterized by energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM) technique for composition and surface morphology of the films. Optical properties of the films were studied by optical transmittance and reflectance measurement

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