Abstract
Taking the influences of piezoelectricity and spontaneous polarization into consideration, the nonlinear optical Kerr effect in a nitride semiconductor coupling double quantum well (DQW) has been theoretically investigated by using the compact density matrix approach and iterative treatment. The electronic eigenstates in a nitride DQW are exactly solved based on the built-in electric field model already constituted in recent reference. The band non-parabolicity effect of nitride heterostructures has been taken into account. A typical wurtzite GaN / AlGaN DQW is chosen to perform numerical calculations. The calculated results reveal that the optical Kerr coefficients sensitively depend on the structural parameters of the coupling DQW system. Moreover, a strong optical Kerr effect can be realized in the nitride DQW by choosing a group of optimum structural parameters and doped fraction.
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