The optical band gap of LiTaO3 and Nb2O5-doped LiTaO3 thin films based on Tauc Plot method to be applied on satellite

Abstract

This research observed the optical band gap of thin films made from LiTaO3 undoped (0%) and doped (5% and 10%) with Nb2O5 in the 1 M-solubility deposited on n-type Si (111) substrates. The thin films are manufactured with coating process of substrates by Chemical Solution Deposition (CSD) method using a spin coater device at a rotation speed of 3000 rpm for 30 seconds and annealed in furnace (Nabertherm B180) at a temperature of 850°C for 15 hours. The optical absorption data of thin films are obtained by using an Ocean Optics USB2000 device in the wavelength of visible light. The band gap curve is determined from optical absorption data processing using Tauc Plot method. The Tauc Plot with indirect transition shows that LiTaO3 doped with Nb2O5 provides increased optical band gap value in a range less than 3.5 eV. Based on the results of this research, it can be concluded that LiTaO3 and Nb2O5-doped LiTaO3 thin films on n-type Si (111) substrate are semiconductor materials and has the potential to be applied on satellite.