The offset of the quantum interband transitions in non-crystalline semiconductors

Abstract

The paper proposes an approach to the description of non-crystalline semiconductors, which are promising materials in solar photovoltaic industry. We describe the optical wave interaction with film structure that has an amorphous solid state, its thickness being about 100 nanometers. The edge’s fundamental absorption displacements in semiconductors with the introduction of defects into the periodic lattice have been explained by comparing the crystalline and amorphous material. Averaged experimental data have been compared with the proposed description of the absorption coefficient in single-crystal and amorphous silicon. Optical band gap expansion in silicon, which leads to the absorption spectrum shift from 1.12 to 1.6 eV, has been shown and described.