Abstract
The size, shape, and number density of microvoids in device quality glow discharge deposited hydrogenated a-Si have been obtained by small angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids contain ∼4–9 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple quantum NMR.
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