Abstract
A thermistor with a negative temperature coefficient of resistance (NTCR), based on the semiconducting (Ba0.8Sr0.2) (Ti0.9Zr0.1)O3 ceramics, is fabricated by boundary-layer (BL) technology. By adding a suitable amount of V2O5 as additive, a semiconducting boundary layer is segregated at the grain boundaries after sintering in a reducing atmosphere. This layer dominates the temperature-dependent property and shows an NTCR effect with a thermistor constant of about 4200 K. Based on the microstructural and electrical properties, an n+-n-n+ energy band model is proposed for this boundary-layer thermistor.
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