Abstract
According to excellent photoelectric properties of InGaAs epitaxial material, and important application of the spectral bands at center wavelength of 1.38 μm and 1.60μm, the new-type monolithic dual-band InGaAs detector is studied in this paper. The detector was designed and fabricated with mesa structure and Fabry-Perot cavity by thermal evaporation. The current-voltage characteristics, response spectra of monolithic detector were measured. The bandwidths of 1.38 μm and 1.60μm waveband detector are 46nm and 54 nm respectively. A 400×2 dual-waveband monolithic detector was wire-bonded with two 400×1 readout circuits, to form 400×2 dual-waveband InGaAs focal plane arrays (FPAs). At room temperature, the detectivity D*, non-uniformity, response bandwidth and the non-operative pixel ratio of 1.38 μm waveband FPAs are 7.71×10<sup>11</sup>cmHz<sup>1/2</sup>/W, 6.20%, 46nm and 0.25%, respectively, and the ones of 1.60 μm waveband FPAs are 6.06×10<sup>11</sup>cmHz<sup>1/2</sup>/W, 3.20%, 54nm and 0.25%, respectively. The monolithic dual-waveband InGaAs focal plane arrays (FPAs) plays an important roles in developing compact, low-cost and high-precision photoelectric detection (imaging) system.
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