Abstract
The nonlinear radar testing using a single wideband simulator of the laying device is considered. It is shown that the simulator on the basis of the flat two-armed spiral antennas with semiconductor diode in the load has a thermal sensitivity to electromagnetic field. The energy dissipation of the probe signal leads to deformation of the current-voltage characteristics (CVC) of the diode composed of the simulator. Parameter $\gamma$ is introduced as the degree of closeness to the equilibrium state of the diode. It characterizes the degree of CVC deformation during sensing. According to the experimental data normalized approximating function (NAF) depending on the parameter $\gamma$ is obtained. The phenomenon of a lens identification attribute inversion using NAF is investigated. It consists in changing the ratio between the levels of second and third harmonics response signal to the opposite value. The acquisition of unmasking properties of the structure "metal-oxide-metal" by simulator is identified. The maximum frequency distribution of the unmasking sign inversion occurrence depending on the normalized voltage value of operating point displacement of the diode composed of the simulator is received. It is suggested to capture the unmasking sign inversion of the simulator to judge the reliability of embedded devices detection and identification by the ability of nonlinear radar.
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