Abstract
Er doped ZnO (EZO) films have been deposited on quartz substrates by magnetron sputtering. The X-Ray diffraction results show that all the EZO films exhibit a preferred (0 0 2) growth direction. The Z-scan experiment results show that EZO films have the self-defocusing nonlinearity and good nonlinear absorption behavior. Moreover, the optical transition dynamics results show that the rise time comes from the energy relaxation of the e-h pairs. The decay lifetimes are dominated by the excited state to the ground state transitions in the Er3+ ions. Our results show that EZO film is a promising candidate for future optoelectronic device applications.
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