Abstract

The misfit deformation in a film-substrate system is mostly concentrated in the film when the stiffness of the system is dominated by that of the substrate. Such is generally the case in microelectronics applications. For many semiconductor materials with electronic properties suitable for device applications, the associated mismatch parameter routinely falls in the range, say, from −5% to +5%. Elastic strains of such magnitude provide a source of free energy for configurational modifications. To examine the configurational stability of such a uniformly strained film, the elastic deformation associated with a perturbation in configuration is first obtained. This elastic deformation and the misfit deformation are then used to calculate the film elastic energy. For a strictly linear analysis, the resulting stability condition is either a function of the mismatch strain energy density, for the case of a morphological perturbation, or completely unrelated to the underlying mismatch, for the case of a compositional perturbation. In either situation, the sign of the mismatch is totally immaterial. In this paer, the elastic deformation brought about by a perturbation in the configuration is taken as a small deformation superimposed on the large mismatch deformation in a nonlinear setting. The role of the mismatch is thus more fully explored and uncovered.

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