Abstract

Modelling of the non-equilibrium crystallization ofInxGa1−xSbyAs1−y alloys is presented. Formation of the alloy lattice matched to the GaSb or InAs substrate fromsupercooled liquid solutions is considered. Non-equilibrium crystallization is described bythe minimum condition of the Helmholtz free energy of the non-equilibrium heterogeneoussystem. A simple solution model is used for the liquid and solid phases. The differences in thecompositions of the GaSb- and InAs-rich alloys crystallized from supercooled solutions on10 °C and saturated liquid solutions are demonstrated.

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