Abstract
The NH-20SP medium-current ion implanter has been developed to meet the needs of advanced ULSI fabrication processes. The NH-20SP has the following features: (1) parallel-beam implantation, (2) 8 in. wafer compatible, (3) precise dose-uniformity control, (4) in-situ parallelism and uniformity monitor, (5) large-tilt-angle implantation, (6) step wafer-rotation during implantation. The NH-20SP employs a hybrid scan system. The horizontal parallel-beam sweep is accomplished with two sets of electrostatic electrodes. A wafer is scanned vertically by a swing-arm scan mechanism. A digital beam sweep system controls the dose uniformity across the wafer. Implant dose uniformity is achieved by adjusting the speed of the vertical wafer motion. The swing-arm scan mechanism provides a large-tilt-angle implantation and stepwise rotation of the wafer during implantation. In this paper an overview of these features will be given and performance data will be presented.
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