The next generation of hydrogen gas sensors based on transition metal dichalcogenide-metal oxide semiconductor hybrid structures

Abstract

The demand for susceptible and selective hydrogen gas sensors is growing in fuel cells, chemical production, and automotive industries. Detecting H2 gas at the ppm or ppb level is crucial due to its colourless, odourless, tasteless nature, as well as its flammability and explosiveness. Transition metal dichalcogenides (TMDs) and metal oxide (MO) semiconductors-based hybrid structures have garnered attention in recent years as promising candidates for gas sensing applications owing to their unique properties, including a high surface area, tunable bandgap, and strong gas adsorption. This paper aims to offer insights into the potential of TMD-MO hybrid structures as the next generation of hydrogen gas sensing platforms, contributing to developing highly sensitive and selective gas sensors for diverse industrial applications. TMD-MO hybrid structures are vital for detecting hydrogen gas with high sensitivity and selectivity, which are essential for safe and efficient hydrogen-based systems. Furthermore, these hybrid structures hold significant potential for further customization and enhancement to suit specific applications. Overall, TMD-MO hybrid structures offer a promising avenue for developing next-generation hydrogen gas sensors useable in various industrial applications and promoting a safe and sustainable hydrogen economy.