Abstract
Abstract This paper presents the methods of fabricating narrow parallel submicrometric stripes in silicon dioxide and a resist layer. The experiments were conducted by two techniques: double patterning lithography and double exposure lithography. In addition to the above mentioned processes, mask translation was applied. For all conducted experiments, chrome masks and a 405 nm line of the high pressure mercury lamp of an MA-56 Mask Aligner System were used. The main aim of the performed tests was to establish the utility and the possible applications of the methods used.
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