Abstract
A semiconductor device similar in principle to the injecting-drain-field-effect transistor, having wide ranges of controllable negative resistance which can be used in counting, flip-flop, amplifying, and oscillator circuits, is described. The negative resistance arises from the modulation of the current between two ohmic contacts of circular symmetry, on a flat semiconductor wafer, by the effect of the collection of minority carriers on the pinching potential of a collector electrode. Families of negative resistance, of either the shunt or series type, are obtainable depending upon the mode of operation. Power gains of 60 and thermal dissipation of 1/4 watt have been achieved in liquid cooled units the size of high-frequency transistors. An improved sandwich-type base tab for mounting semiconductor wafers is shown. A theoretical analysis of the operation of the device permits prediction of the effect of various physical parameters upon the static electrical characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
