Abstract
X-ray absorption near-edge spectroscopy (XANES) measurements on 1:2:2 compounds of the form RT2X2 with R=Ce and Eu, T=a transition metal, and X=Si or Ge are presented. XANES measurements on each of the three sublattices are used to elucidate elements of the electronic structure of these compounds. In particular, the evidence for the strongly bonded T-X planes, the coupling of the Ce valence-state stability to the T-X planes, and the response of the X-p orbitals to varying transition-metal components are discussed.
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