Abstract
Electrical transport measurements were carried out on a ceramic samples of La 0.5Pb 0.5MnO 3 containing 10 at.% of Ag in a dispersed form and La 0.8Sr 0.2MnO 3. Their resistivity at zero applied magnetic field exhibits a shallow minimum at the interval of T∼25–30 K. This minimum shifts towards lower T upon applying a magnetic field ( H) and disappears at a certain field H cr, while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of ρ in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained in spite of significant difference in the crystallinity (grain size) of the samples.
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