Abstract
We report on a study of the optical properties of a (0 0 1) oriented GaAsIn x Ga 1− x As double quantum well structure. In the photoluminescence excitation spectra we observe a transition associated with the quantum wells at an energy greater than the bulk GaAs exciton. Circular polarisation excitation experiments show that this transition involves a light hole state. For confinement effects to increase the energies of the lowest lying electron and light hole states such that their effective energy gap is larger than the energy of the bulk GaAs exciton, the two carriers cannot be confined in the same layer of material. Thus the observed electron to light bulk hole transition must be type II in nature.
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