Abstract
Defects in low-k organosilicate glass produced during air and nitrogen plasma exposure were investigated. The defects, through the measurements of electron-spin resonance and Fourier-transform infrared spectroscopy, were found to be silicon-dangling bonds. Air-plasma exposure increases the defect concentrations by breaking silicon–hydrogen bonds. Nitrogen-plasma exposure as well as free-radical exposure has only a small influence on the bond breaking. It was also shown that ultraviolet curing improves the chemical-damage resistance of the dielectric.
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