Abstract
The nature of interface defects in a-Si:H/a-Si 1−x N x :H multilayers has been elucidated on the basis of the experimental results on the spectral dependences of photoluminescence (PL) and optically detected magnetic resonance (ODMR) taken before and after prolonged illumination at 2 K. The interface defects are considered to consist of pair defects such as close and separate T 3 + -N 2 − pair defects as well as single Si-dangling bonds.
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