Abstract
Large elongated inclusions in heavily Te-doped 〈001〉 Czochralski pulled, GaAs crystals have been studied by a combination of scanning and transmission electron microscopy, electron microprobe analysis and X-ray topography. They have been shown to lie along the 〈110〉 directions in the {001} growth plane and to consist of two parts, an outer single crystal region of varying composition based on Ga2Te3 and an inner polycrystalline core rich in Te and As. Their crystallography has been interpreted in terms of impurity segregation and facet formation during crystal growth while their composition is discussed with reference to the Ga-As-Te phase diagram.
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