Abstract
Aberration corrected STEM EELS is used to investigate point defects in Cu2ZnSnS4 (CZTS). Nano-scale clusters of ZnCu anti-site donors are observed with the donor concentration being sufficiently high to degenerately dope the semiconductor. Uncompensated donors and acceptors result in electrostatic potential fluctuations within the material. The effect of these potential fluctuations on the photovoltaic device properties is discussed.
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