Abstract
The distributions of deep electron levels have been studied in 29Si+-ion-implanted GaAs subsequently annealed using short, intense pulses of incoherent light. A number of implantation-induced deep states were found and their origins have been correlated with particular types of lattice disorder. Four levels have been identified with displaced atoms, one with vacancies and another with a complex involving nitrogen recoil-implanted into the GaAs from Si3N4 capping layers.
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