Abstract
In this paper we report nanothickness tungsten (W) thin films with nanoscale thickness prepared by DC magnetron sputtering. Three kinds of samples were realized using micromachining technology, including two-wire and four-wire terminal configurations and only Al electrodes. Using four-wire terminal method, we studied on the electrical property of W film and the contacting resistance between W film and Al electrode. The results show that our as-deposited W film is β-W crystal structure and exhibits good resistive property. Al formed a good ohmic contact with W films. Both the resistivity of W film and the contacting resistance declined nearly linearly with the thickness increasing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
