Abstract
It is universally found that the photoelectronic properties of a-Ge:H and a-Si 1−xGe x:H alloys are much poorer than those of a-Si:H. For example, the efficiency mobility-lifetime products from steady-state photoconductivity measurements and the mobility-lifetime products from time-of-flight data decrease by about a factor of 100 between a-Si:H and a 50% Ge alloy. Estimates of the gap density-of-states from spin resonance or optical absorption, however, indicate increases of only an order of magnitude, and measurements of the Urbach tail parameter show essentially no change throughout the alloy series. There would appear to be a growing consensus that these results are reconciled by a model of a rapidly decreasing electron mobility with alloying. This paper examines the evidence for this, and discusses how the details of the results for steady-state and transient photoconductivity may be understood.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
