Abstract
In the new MOS-controlled turn-off thyristor described, the recombination of holes in the n base by the shunt of the floating p-n junction in the n base occurs simultaneously with the recombination of holes in the p base due to the cathode emitter shunt using the two MOS gates. This turn-off operation offers two important improvements over the normal MOS-controlled thyristor by virtue of the recombination of holes in the n base during the turn-off process. These improvements are high-speed turn-off and high maximum controllable current. Experimental verification of the device's operation is achieved using a lateral minority-carrier control (MCC) GTO thyristor having two n-channel MOSFETs. In this device, the turn-off operation is achieved by the simultaneous recombination of holes in both the n and p bases due to the equivalence of one-gate driving accomplished by the connection of the two MOS gates. >
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