Abstract
The growth mechanism of GaN was studied by Monte Carlo simulation. The simulation was carried out on the hexagonal structure of GaN. The simulation of the growth process on the vicinal surface shows that epitaxial growth is in a step-flow mode at the simulation temperatures above the critical temperature T C, otherwise it is in a two-dimensional mode. The upper limit of the energy barrier to hopping is roughly estimated to be 1.43±0.25 eV which is in a good agreement with the reported experimental value.
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