Abstract
A new computational method— Monte Carlo flux method (MCF)—is presented, which allows calculating electron distribution functions in weakly ionized gases of stationary molecules subjected to electric and magnetic fields. This method should be equally suited for calculating electron distribution functions in semiconductors. The method utilizes a modified Monte Carlo code to calculate transition probabilities for electrons between phase cells. Transport equations utilizing these transition probabilities are used to calculate steady state and transient distribution functions. Electron generation and depletion processes are easily incorporated. Numerical calculations of space independent electron distribution functions in nitrogen (N 2) are presented for both steady state and transient conditions, and compared with results obtained with conventional Monte Carlo (CMC) calculations. The major advantages of the new method are discussed.
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