Abstract
Mass spectrometric and gas-phase electron diffraction (GED/MS) studies of overheated Sc(acac)3 vapor at temperature 812(5) K were performed. Experimental data indicate that overheated vapor contains, along with tris-form Sc(acac)3, bis-complex Sc(acac)2, which is the result of partial thermal dissociation of tris form. Testing of three models D2h(2Ag), D2h(2B3g) and D2d(2B1) of bis-complex geometric and electronic structure showed that the planar model D2h(2B3g) best fits GED/MS data. Reinterpretation of GED/MS data for saturated vapor of Sc(acac)3 at T = 428 K was carried out. Temperature dependence of rg(Sc-O) parameters of effective temperature-averaged geometric configuration Sc(acac)3 is noted.
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