The Molecular Dynamics Study for the Damage and Etching Properties of Low Energy Ar Ion Implantation. (Effect of Ion Energy, Polar Angle of the Incident Ion and Substrate Strain).

Abstract

Molecular dynamics simulations have been performed for the Ar bombardment to Si surface in order to investigate the damage and etching properties. The dependence of the ion energy, the polar angle of the ion and substrate strain was investigated. The averaged number of interstitials was found to be a linear function of the damage energy, and its slope showed good agreement with the Kinchin-Pease model. The averaged number of etched atoms was not linear and its efficiency decreased as the ion energy was increased. It was found that the damages and etchings were caused by the energy injection to the substrate inside and the instantaneous thermal spike of the substrate surface, respectively. Mixing of two types of collision, i.e. binary and many body collisions resulted in increased dispersion of the damage. The damage decreased as the polar angle was increased. Conversely the etching increased, and had the maximum value at 70 degree. The strain dependence showed the symmetrical increased curve both in tension and compression. However, under 10% compressive strain and 1000 eV ion energy, the blocking and instability of the lattice created the significant disorder region.