Abstract
The type-IV diluted magnetic semiconductor (DMS) [Si(20Å)∕Mn(x)]30 multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0Å have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn+2. The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs.
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