Abstract
Modulation of grain boundary barrier in ZnO layer by polar liquid, was investigated in ZnMgO/ZnO heterostructures grown by plasma-assisted molecular beam epitaxy. Traditionally, surface adsorbates can only affect the surface atoms or surface electronic states. However, it was found that the electronic conduction property of ZnO far from the surface could be tailored obviously by the polar liquid adsorbed on the ZnMgO surface. Physically, this phenomenon is supposed to be caused by the electrostatical couple between the liquid polarity and the grain boundary barrier in the ZnO layer through crystal polarization field.
Highlights
Modulation of grain boundary barrier in ZnO layer by polar liquid, was investigated in ZnMgO/ZnO heterostructures grown by plasma-assisted molecular beam epitaxy
The ZnMgO coverlayer can prevent direct contaction between ZnO layer and test liquid to protect functional ZnO layer in a practical device. These results give a solid support that the transport property of ZnMgO/ZnO heterostructures can be successfully controlled through the modulation of grain boundaries (GBs) barrier in ZnO layer by polar-effect via the surface polar liquid droplet
The device behavior that the GB barrier height is proportional to the dipole moment of organic agents may be exploited to design ZnMgO/ ZnO-based sensors for polar liquids
Summary
Modulation of grain boundary barrier in ZnO layer by polar liquid, was investigated in ZnMgO/ZnO heterostructures grown by plasma-assisted molecular beam epitaxy. It was found that the electronic conduction property of ZnO far from the surface could be tailored obviously by the polar liquid adsorbed on the ZnMgO surface. This phenomenon is supposed to be caused by the electrostatical couple between the liquid polarity and the grain boundary barrier in the ZnO layer through crystal polarization field. Based on room-temperature current-voltage (I-V) test to the ZnMgO/ZnO heterostructure using an in-plane FET device structure, it was found that the carrier transport property in ZnMgO/ZnO heterostructures have been modulated from ohmic to Schottky-like after the introduction of polar liquids. This work offered direct and strong evidence that the GBs barrier and polarization play a key role in the physical property and device performance of ZnO-based polar structures
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