Abstract

Perovskite solar cell (PSC) consisting textile-based electrodes has been created novel features for future energy supply. Recently, Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 perovskite has appeared as a favourable candidate for flexible perovskite solar cells. However, a confined performance was acquired when the conventional Spiro-OMeTAD were used as hole transport layer (HTL) material because of suboptimal valance band offset (ΔEV) between Perovskite/HTL layers. In this study, a theoretical drift–diffusion​ modelling is used by finite volume method (FVM) to investigate performance of textile perovskite solar cell with double hole transport layers (HTLs) with graded band gap energies. Copper thiocyanate (CuSCN) and Nickel Oxide (NiO) are replaced as double HTLs, which dramatically enhanced the performance due to optimal upward step by step valance band offsets (ΔEV) between Perovskite/Textile Composite Electrode layers. It is shown that the decreasing of the metal–semiconductor schottky barrier height of electrodes leads to significant increase in fill factor (FF). Also, it is revealed that the enriching of perovskite carrier diffusion length by equipoising of carrier capture cross section, carrier total defect density and carrier thermal velocity substantially promote the overall device efficiency. The short-circuit current (Jsc) of 20.65 mA/cm 2, open-circuit voltage (Voc) of 1.19 V, fill factor (FF) of 73.57%, and power conversion efficiency (PCE) of 18.20% have been obtained by optimization of electrodes properties and perovskite layers. Remarkably, the advantageous of low cost, flexible, and chemical stable conducive textile composite, extends new opportunities in the commercial expansion of highly efficient photovoltaic textile in optoelectronic industry field.

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