Abstract
A model of the optical power degradation of an InGaN/GaN LED during testing under direct current, which takes into account the inhomogeneous distribution of the defects density in the heterostructure, is presented. According to the simulation results, the rate of degradation of the LED optical power significantly depends on the degree of inhomogeneity of the defects density distribution profile. Experimental testing of the model has been carried out. The proposed model makes it possible to predict the rate of degradation of InGaN-based LEDs with varying degrees of inhomogeneity of the defects density distribution profile and can be used to develop a technique for rejecting defective and potentially unreliable LEDs.
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