Abstract
The improved value of surface resistance of epitaxial Y-Ba-Cu-O films directly grown on r-plane sapphire have been achieved. The surface resistance of the films was 1.6 mOhm at 35 GHz, 6.1 mOhm at 65 GHz and 31 mOhm at 135 GHz, that is essentially lower than surface resistance of copper films. The microstrip resonator fabricated with film of Rs= 10 mOhm at 35 GHz is described. The prospects of further improvement of microwave characteristics of epitaxial Y-Ba-Cu-O films on sapphire substrates is discussed.
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