Abstract
The (Al, Cr, Ti)FeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOxfilms was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.
Highlights
This study deals with the room-temperature resistivity of alloy oxide thin films
We investigated the FeCoNiOx, AlFeCoNiOx, and CrFeCoNiOx alloy oxide films, and the results were compared with TiFeCoNiOx films
The selection area diffraction pattern (SAD) proved the amorphous structures, and the dark field image (DF) images show the nanoscale clusters in these thin films, indicating that the as-deposited thin films
Summary
This study deals with the room-temperature resistivity of alloy oxide thin films. Professor Yeh introduced the new concept of high-entropy alloys as basis for alloys whose properties are not dominated by their major element [6,7,8,9,10,11,12]. We used this concept to cast the TiFeCoNi alloy and studied its characteristics [13]; we used this alloy as the target to measure the resistivity of the TiFeCoNiOx thin film. We added chromium to substitute titanium because of its excellent oxidation resistance
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