Abstract
The microstructure, optical property and magnetism of nitrogen ion-implanted SiO2 were studied. The nitrogen incorporation into SiO2 was confirmed by means of x-ray photoelectron spectra and a Fourier-transform infrared absorption spectrum. The bond angle of Si–O–Si is decreased by nitrogen implantation. The absorption in the ultraviolet region is enhanced, which may be due to the band gap narrowing effect. Room-temperature ferromagnetic-like behavior is obtained in the nitrogen-implanted sample with a nominal dose of 1 × 1018 ions cm−2.
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