Abstract
Co2MnSi thin films are usually deposited on Cr-buffered MgO substrate. In this work, Co2MnSi thin films were deposited directly on MgO substrate and annealed at 350 °C to 650 °C to investigate the evolution of microstructure, electronic, and magnetic properties. Due to nearly perfect B2-ordering and very good L21-ordering, the Ms increases to 1029 emu/cc and Hc decreases to 27 Oe, respectively, after annealing at 650 °C. The large residual resistance ratio (RRR = 2.40) and small magnetic damping constant (α = 0.0039) further demonstrates that nearly perfect B2-ordering, good L21 ordering, and nearly perfect film quality have been achieved.
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