Abstract
The microstructure and electrical properties of the contacts formed in the Ni(30 nm)/Al(10 nm)/〈100〉n-Si system due to rapid thermal processing were studied at temperatures between 300 and 900 °C. A melting at the intermediate Al layer was observed already at about 580 °C after 2-s heat treatments. This rapid eutectic melting, assumed to initiate at the Al-Si interface, resulted in the formation of a unique contact composed of the Ni(Al0.5Si0.5)/Al3Ni/NixSiy/n-Si structure with fairly smooth interfaces between the layers. The sheet resistance of the layers and the Schottky barrier height of the contact were measured as a function of the rapid thermal processing temperatures. As a result of the eutectic melting reaction at 580 °C the sheet resistance of the formed layers decreased from 3.2 to 2.6 Ω/⧠, the Schottky barrier height between the layers and Si increased from 0.61–0.76 eV, and the effective electrically active area of the contact increased. These electrical properties are discussed in correlation with the microstructure formed in the Ni/Al/Si system due to the rapid thermal processing.
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