Abstract
Sn(S0.8Se0.2) thin films were successfully grown by evaporation technique with the distance variation between substrate and source (10, 15, and 25 cm) to investigate their microstructural parameters and morphology. The X-ray diffraction patterns showed that Sn(S0.8Se0.2) thin film had a single phase with the orthorhombic crystal structure. The crystallite size and the lattice strain were evaluated using the Williamson-Hall (W-H) analysis with Uniform Deformation Model (UDM). The increase of the spacer (d = 10, 15, and 25 cm) causes the increase of the value of strain and crystallite size. One of the factors that affect the increase of crystallite size in the SnSe0.2S0.8 thin films with the spacer is the lattice strain value of the crystals. The scanning electron microscopy (SEM) confirmed the high homogeneity of grains. SnSe0.2S0.8 thin films contain Stannum (Sn) at 21.88 %, Selenium (Se) at 2.31 %, and Sulfur (S) elements at 14.24 % in the majority.
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