Abstract
In this study, flat piezoelectric microcantilevers were fabricated under low-stress Pb(Zr0.52Ti0.48)O3 (PZT) film conditions. They were analyzed using the Raman spectrum and wafer curvature methods. Based on the residual stress analysis, we found that a thickness of 1 μm was critical, since stress relaxation starts to occur at greater thicknesses, due to surface roughening. The (111) preferred orientation started to decrease when the film thickness was greater than 1 μm. The d33 value was closely related to the stress relaxation associated with the preferred orientation changes. We examined the harmonic response at different PZT cantilever lengths and obtained a 9.4-μm tip displacement at 3 Vp-p at 1 kHz. These analyses can provide a platform for the reliable operation of piezoelectric microdevices, potentially nanodevice when one needs to have simultaneous control of the residual stress and the piezoelectric properties.
Highlights
There is strong interest in the use of piezoelectric films applied to micro/nano-electro-mechanical systems (MEMS/nanoelectromechanical systems (NEMS)) for sensing, actuating and energyharvesting applications [1,2,3]
We showed that the piezoelectric response was related to the stress relaxation with a preferred orientation change [9]
The residual stress of the films according to PZT film thicknesses was calculated from the Raman spectra and the Lydane–Sach–Teller relationship [10]
Summary
There is strong interest in the use of piezoelectric films applied to micro/nano-electro-mechanical systems (MEMS/NEMS) for sensing, actuating and energyharvesting applications [1,2,3]. The radius of the curvature of the PZT films deposited onto the Pt/Ti/SiO2/Si (100 μm) substrates was measured using Tencor P1 equipment; the stress was calculated according to the Stoney equation.
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