Abstract
ABSTRACTThis paper deals with the chemical microanalysis of the Si02/si terface by Pulsed Laser Atom Probe (PLAP). The PLAP technique is briefly described, emphasizing its unique advantages in the study of the chemistry of interfaces. A transition oxide layer of stoichiometry SiO has been identified by PLAP analyses of the Si02/S' interface in thermal and anodic oxides. Simple models of the structure of the interface incorporating this SiO layer are presented, and the possible role of this layer during oxidation is discussed.
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