Abstract
AbstractThe temperature dependence of field‐effect mobility is investigated in ambipolar organic thin film transistors based on F16CuPc/α6T pn heterojunction. The results show that the thermally activated ambipolar mobilities obey the Meyer‐Neldel (MN) rule and activation energy (EA) steadily decreases with increasing gate voltage. At high temperatures (> 170 K), strong activated behaviour is observed, where higher EA are attributed to defects, disorder, and grain boundaries in the polycrystalline film since the transport has been described by a hopping transport process between localized trap states. Blow 170 K, much weaker activated behaviour is observed, where the charge transport is dominated by shallow traps with much lower EA. The MN energy and isokinetic temperature for both p‐channel and n‐channel are surprisingly similar to these of organic unipolar devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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