Abstract
We present an original method for processing experimental data in quantitative thermal analysis by laser interferometry and reflectometry on normally functioning microelectronic devices. This method hinges on the different temporal behaviours of thermally induced reflectometric and interferometric responses of a device under electric excitation. It permits separation of interferometric contributions related to heat diffusion from those induced `instantaneously' by the heat source's temperature variation. A useful result is that, instead of complex non-stationary modelling, it suffices to perform just stationary modelling of the separated contributions to derive thermal data of interest, namely the device's functioning temperature, the material's thermoreflectance coefficient and so on. A detailed description of the development of the proposed method is given for a current-carrying element in an integrated circuit.
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